厚层抗蚀剂曝光模型及其参数测量  

Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist

作　　者：刘世杰[1,2] 杜惊雷[1] 段茜[1] 罗铂靓[1] 唐雄贵[1] 郭永康[1] 杜春雷[3] 

机构地区：[1]四川大学物理学院 [2]陕西理工学院物理系,汉中723001 [3]微细加工光学技术国家重点实验室

出　　处：《Journal of Semiconductors》2005年第5期1065-1071,共7页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60276018);微细加工国家重点实验基金资助项目~~

摘　　要：针对厚层抗蚀剂曝光过程中存在诸非线性因素的影响,更新Dill曝光参数的定义,建立了适合描述厚层抗蚀剂曝光过程的增强Dill模型.光刻过程模拟的准确性与曝光参数的测量精度有很大关系,为此,建立了实时曝光监测实验装置,测量了不同工艺条件、不同厚度抗蚀剂的曝光透过率曲线,并演绎计算出曝光参数随抗蚀剂厚度和工艺条件的变化规律.最后给出了采用增强Dill模型进行曝光过程的模拟和实验结果的分析.Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.Measurement precisions of exposure parameters for thick photoresist will greatly affect the simulation results of exposure process.An experimental facility for measuring the exposure parameters is set up,and transmittance curves with various resist thickness are obtained experimentally.The rules of exposure parameters with the resist thickness,prebaking temperature and time are deduced with statistical theory.At last,the simulation analysis for exposure process of the thick photoresist and photolithography experiment examples are given.

关 键 词：厚层抗蚀剂 光刻 曝光 增强Dill模型 曝光参数 

分 类 号：TN405[电子电信—微电子学与固体电子学]