纳米Cu_3N薄膜的制备与性能  

Preparation and properties of nano-structure Cu_3N thin films

作　　者：吴志国[1] 张伟伟[1] 白利峰[1] 王君[1] 阎鹏勋[1] 

机构地区：[1]兰州大学等离子体与金属材料研究所,兰州730000

出　　处：《物理学报》2005年第4期1687-1692,共6页Acta Physica Sinica

基　　金：甘肃省自然科学基金重点项目 (批准号 :ZS0 2 1 A2 5 0 2 2 C)资助的课题~~

摘　　要：采用柱状靶多弧直流磁控溅射法 ,10 0℃基底温度下在玻璃衬底上制备了纳米氮化铜 (Cu3N)薄膜 .用x射线衍射研究了不同氮气分压对Cu3N薄膜晶体结构及晶粒尺寸的影响 .结果显示薄膜由Cu3N和Cu的纳米微晶复合而成 ,其中Cu3N纳米微晶具有立方反ReO3结构 .通过原子力显微镜对薄膜表征显示 ,膜表面比较光滑 ,具有较低的粗糙度 .x射线光电子能谱对薄膜表面的成分分析表明 ,Cu3N薄膜表面铜元素同时以 +1价和 +2价存在 .Cu3N的Cu2p3 2 ,Cu2p1 2 及N1s峰分别位于 932 7,95 2 7和 399 9eV ,Cu2p原子自旋 轨道耦合裂分能量间距为 2 0eV .用台阶仪和四探针方法测量了薄膜的厚度及电阻率 ,薄膜的沉积速率和电阻率在很大程度上受到氮气分压的调制 .Copper nitride(CU3N) thin films with nano-crystalline were deposited on glass substrates at a temperature of 100 degrees C by DC magnetron sputtering with a columnar target. The structure of the Cu3N thin films was characterized by x-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy. The results indicate that CU3N thin films are composed of nanometer grains with a cubic crystal structure of anti-ReO3 type. The films have a uniform smooth surface with only a roughness(R-a) of 1.7 nm. The binding energy peaks of Cu2P(3/2), Cu2p(1/2) and N1s were at 932.7, 952.7 and 399.9 eV respectively, and spin-orbit coupling energy gap of Cu2p was 20 eV. The film thickness was determined by a profile step scanner, and its resistivity was measured using the four-probe method. The deposition rate and resistivity were found to change with the nitrogen content.

关 键 词：纳米Cu3N薄膜 柱状靶多弧直流磁控溅射法 X射线衍射 晶体结构 氮气分压 

分 类 号：TB383[一般工业技术—材料科学与工程]