Ga_xIn_(1-x)P缓冲层组分对InP自组装形貌影响的研究  

Study on the metamorphosis of InP self-organized islands grown on Ga_xIn_(1-x) P buffer layers

作　　者：王浩[1] 曾谷城[2] 廖常俊[1] 蔡继业[2] 郑树文[1] 范广涵[1] 陈勇[2] 刘颂豪[1] 

机构地区：[1]华南师范大学信息光电子学院,广州510631 [2]暨南大学生命科学学院,广州510632

出　　处：《物理学报》2005年第4期1726-1730,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划 (批准号 :2 0 0 1CB5 10 10 1);广东省科技攻关项目 (批准号 :2 0 0 2C3 2 40 4)资助的课题~~

摘　　要：应用缓冲层对自组装结构的作用能Er 和自组装结构表面能Es 的协同作用分析了InP自组装结构在GaxIn1 -xP缓冲层表面的形貌变化 .计算发现缓冲层组分影响自组装结构的形貌 .随着缓冲层与InP自组装结构之间应力的增加 ,InP岛倾向于拉长 .理论计算还发现随着自组装结构体积的增大 ,自组装结构也随之拉长 .而且缓冲层的参数决定了自组装结构最小能量状态时的体积大小 .应用金属有机物化学气相沉积技术在GaAs衬底上生长了不同的InP GaInP体系 ,并对实验得到的自组装体系形貌进行了分析 .实验结果证实了以上的理论分析 .The morphology of InP self-organized islands grown on GaInP buffer layer was calculated by employing the combination of the elastic energy E r caused by the stress of the buffer layer and the excessive surface energy of the island E s. The result shows that the island morphology is affected by the mismatch between Ga xIn 1-x P buffer layer and InP island. With Ga content increasing in GaInP layer, the island elongates itself with mismatch increasing. The island metamorphosis was elongated also with volume increasing of the island. The parameters of the buffer layer determine the volume of the island which is at the minimized state. The morphology of different InP/Ga xIn 1-x P systems, grown on GaAs substrate by metal organic chemical vapor deposition method, was consistent with our calculations.

关 键 词：缓冲层 半导体自组装结构 表面能 金属有机物化学气相沉积 

分 类 号：O471[理学—半导体物理]