射频磁控溅射法制备SnO_2:Sb薄膜的结构和光致发光性质研究  

Structural and photoluminescence characters of SnO_2:Sb thin films prepared by rf magnetron sputtering

作　　者：王玉恒[1] 马瑾[1] 计峰[1] 余旭浒[1] 张锡健[1] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,济南250100

出　　处：《物理学报》2005年第4期1731-1735,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :90 40 10 0 4);教育部科学技术研究重点项目 (批准号 :0 2 165 )资助的课题~~

摘　　要：采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡 (SnO2 :Sb)薄膜 .制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄 ,晶粒生长的择优取向为 [110 ].室温下光致发光测量结果表明 ,在 392nm附近存在强的紫外 紫光发射 .研究了不同氧分压对薄膜结构及发光性质的影响 ,并对SnO2 :Sb的光致发光机制进行了探索性研究 .SnO2 : Sb films have been prepared on glass substrates by rf magnetron sputtering method. The prepared samples are polycrystalline thin films with rutile structure of pure SnO2 and have orientation of [110] direction. The photoluminescence of the samples was measured at room temperature. An ultraviolet-violet luminescence peak near 392 nm was observed. The effect of different oxygen partial pressures on the structure and luminescence was investigated, and the luminescent mechanism was also tentatively investigated.

关 键 词：二氧化锡 锑薄膜 结构特征 光致发光 射频磁控溅射 

分 类 号：O484.4[理学—固体物理]