快上升沿电磁脉冲作用下PIN二极管中的电流过冲现象  

Overshoot phenomena in PIN diode under EMP with fast rise time

作　　者：周怀安[1] 杜正伟[1] 龚克[1] 

机构地区：[1]清华大学电子工程系微波与数字通信技术国家重点实验室,北京100084

出　　处：《强激光与粒子束》2005年第5期783-787,共5页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：为了研究瞬态电磁脉冲对PIN二极管的干扰,利用基于扩散漂移模型的基本半导体方程,采用半导体器件一维瞬态数值仿真的方法,对快上升沿阶跃电磁脉冲作用下PIN二极管中的电流密度和电荷密度分布的变化进行了研究,分别观察了正反偏电压脉冲作用下过冲电流的产生过程并进行了分析。分析表明,过冲电流是和PIN二极管在高频下的容性表现相关的,无论是在正电压还是负电压情况下,脉冲上升沿时间越短、初始正偏压越高,则过冲电流密度的峰值越高。To study the interference effect of the electromagnetic pulse (EMP) on the PIN diode, the one-dimensional numerical modeling is carried out, which solves the semiconductor equations based on the drift-diffusion model. By observing the variation of the distribution of current density and charge density in the PIN diode during the pulse, the occurrence of an overshoot current under a positive or negative voltage is analyzed. The results show that the overshoot current is due to the capacitive performance of PIN diode under high frequency. Whether the pulse voltage is positive or negative, the magnitude of the overshoot current is increasing with less rise time or higher initial positive bias voltage.

关 键 词：快上升沿电磁脉冲 PIN二极管 干扰 过冲电流 器件数值仿真 

分 类 号：O472[理学—半导体物理]