10Gbit/s GaAs跨阻前置放大器  

A 10 Gbit/s GaAs Transimpedance Preamplifier

作　　者：王国全[1] 

机构地区：[1]中国电子科技集团公司第13研究所,河北石家庄050051

出　　处：《电子器件》2005年第2期248-250,共3页Chinese Journal of Electron Devices

基　　金：国家863计划资助项目(2002AA312100)

摘　　要：GaAs基pHEMT工艺适合于制作10Gbit/s速率的高速前置放大器电路。完成了工作于10Gbit/s速率的跨阻前置放大器电路的器件设计、电路设计,电路采用了串联电感L技术,有效地提高了工作带宽。模拟工作带宽达到9.0GHz,跨阻增益达到58dBΩ。电路采用0.2μmGaAs基pHEMT电子束直写T型栅工艺制作。对制作的电路进行了电测试,可工作于10Gbit/s的速率。GaAs-based pHEMT-technology is fit for high speed preamplifier for 10 Gbit/s operation. A GaAs monolithic integrated transimpedance preamplifier for 10 Gbit/s fiber-optic communication receiver has been designed, fabricated and characterized. The bandwidth of the preamplifier is increased effectively by using series inductor technology. The result of simulation achieved a bandwidth of 9.0 GHz and a transimpedance gain of 58 dBΩ. This preamplifier has been fabricated using 0.2 μm GaAs-based pHEMT EB direct writing T-shaped gate technology and tested at a data rate of 10 Gbit/s.

关 键 词：光纤通信 跨阻前置放大器 GAAS 

分 类 号：TN722.7[电子电信—电路与系统]