基于Si/Si_(1-x)Ge_x/Si HBT的微波功率器件Ge组分的数值拟合计算  

A Numerical Method for Ge-Profile of Microwave Power Device Based on Si/Si_(1-x)Ge_x/Si

作　　者：曾健平[1] 周少华[1] 文剑[1] 李宇[1] 田涛[1] 

机构地区：[1]湖南大学应用物理系,长沙410082

出　　处：《电子器件》2005年第2期251-253,共3页Chinese Journal of Electron Devices

摘　　要：采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n-p-n型HBT,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并用数值方法计算出集电区电流密度Jc随VBE变化的直流方程,与实验结果相符。并得到一个最佳的Ge组分值。对器件的仿真设计具有实际指导意义。A double-mesa hetero-junction bipolar structure of n-p-n type microwave power device is used. The Si is chosen for emitter and collector, and Si_ 1-xGe_x alloy is for base. Based on some experiment data, a numerical method is used to get an equation about forbidden band E_g via the variety composition of Ge at 300 K using MATLAB, which is more precision than linearization. We also calculate the collector current density J c via the variety of V_ BE and the obtained equation is consistent with the experiment result. An optimum Ge composition value was found. It has practical significance for the device design and simulation.

关 键 词：双极型 微波功率器件 SI1-XGEX 数值方法 

分 类 号：TN301[电子电信—物理电子学]