大束流离子注入形成CoSi_2/Si肖特基结电学特性  

Electronic Characteristics of CoSi_2/Si Schottky Junction Formed by High Flux Metal Ion Implantation

作　　者：张浩[1] 李英[1] 王燕[1] 田立林[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2005年第2期265-268,共4页Research & Progress of SSE

摘　　要：文中研究了使用大束流金属离子注入形成的CoSi2/Si肖特基结的特性。肖特基结由离子注入和快速热退火两步工艺形成。Co离子注入剂量为3×1017ion/cm2,注入电压25kV。快速热退火温度为850°C,时间为1min。应用I-V和C-V测量进行参数提取。I-V分析得到势垒高度约为0.64eV,理想因子为1.11,C-V分析得到势垒为0.72eV。最后依据实验结果对工艺提出了改进意见。We present a study of CoSi_2/Si Schotky Junction formed by metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. The Co implanting dose is 3×10~17 ion/cm2 followed by rapid thermal annealing(RTA) at 850°C for 1 minute. I-V results show that barrier height is 0.64 eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72 eV. Improvements for this new process are provided.

关 键 词：肖特基结 势垒高度 电流-电压特性 电容-电压特性 

分 类 号：TN386.3[电子电信—物理电子学]