深能级杂质Zn对n型硅半导体的补偿特性  

Compensation Characteristics of Deep Energy Level Impurity Zn to n-Type Silicon

作　　者：蔡志军[1] 巴维真[1] 陈朝阳[1] 崔志明[1] 丛秀云[1] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011

出　　处：《Journal of Semiconductors》2005年第6期1140-1143,共4页半导体学报（英文版）

基　　金：中国科学院"西部之光"资助项目~~

摘　　要：为得到高B值(材料常数)的单晶热敏材料,采用高温气相扩散的方法在n型硅中掺杂深能级杂质Zn,得到高补偿的硅材料,并对该材料特性进行了测试和分析.结果表明:这种补偿硅具有热敏特性,该材料的B值为6300K左右,其阻值对温度的依赖关系与杂质的补偿程度有关.In order to obtain mono-crystal silicon thermistor material having high B-value,deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method.Highly compensated silicon material is obtained.The characteristics of the material are measured and analyzed.It is shown that the compensated silicon material has thermally sensitive characteristics.The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.

关 键 词：深能级杂质 费米能级 多数载流子 补偿度 

分 类 号：TN304[电子电信—物理电子学]