光电耦合器件g-r噪声模型  

A Model for a g-r Noise in Optoelectronic Coupled Devices

作　　者：包军林[1] 庄奕琪[1] 杜磊[1] 吴勇[1] 马仲发[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2005年第6期1208-1213,共6页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60276028);国防预研基金(批准号:51411040601DZ014);国防科技重点实验室基金(批准号:51433030103DZ01)资助项目~~

摘　　要：在宽范围偏置条件下,测量了光电耦合器件的g-r(产生复合)噪声.实验结果表明,随着偏置电流的增加,g-r噪声逐渐向高频移动,其噪声幅值呈现先增加后减小的变化规律.通过测量前级噪声和后级噪声,发现光电耦合器件g-r噪声来源于后级的光敏三极管.基于载流子数涨落机制,建立了一个光电耦合器件g-r噪声的定量分析模型.实验结果和本文模型符合良好.g-r noise (generation-recombination noise) in optoelectronic coupled devices(OCDs) is studied in a wide bias range.Experimental results demonstrate that the magnitude of g-r noise becomes large and then shrinks as the input current increases,while its intrinsic frequency gets large.By measuring the front and back noise of OCDs,it is also discussed that the source of g-r noise in OCDs is a photosensitive transistor.Based on the mechanism of carrier number fluctuations,a g-r noise model in OCDs is developed.The experimental results agree well with the developed model.

关 键 词：1/f噪声 g—r噪声 光电耦合器件 深能级缺陷 

分 类 号：TN364[电子电信—物理电子学]