Ar压强对硅基Al膜应力和微结构的影响  

Effect of Ar Pressure on Stress and Microstructure of Al Films Grown on Si Wafers

作　　者：宋学萍[1] 饶淑玲[1] 方伟[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039

出　　处：《真空科学与技术学报》2005年第2期150-153,158,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.59972001);安徽省自然科学基金(No.01044901);安徽省教育厅科研基金(No.2003KJ025);安徽省人材专项基金(No.2004Z029);安徽大学人材队伍建设基金资助项目

摘　　要：用直流磁控溅射法在室温Si基片上制备了溅射时间分别为5min和10min,氩气压强分别为0.7、3、6Pa的6种Al膜,用光学相移法和X射线衍射法对Al膜的应力和微结构随着压强的变化进行了研究。应力分析表明在同一溅射时间,随着氩气压强的减小,Al膜厚度增大,在相同选区范围内,Al膜的应力差变小,应力分布趋于均匀。结构分析表明制备的Al膜呈多晶状态,晶体结构仍为面心立方,在相同溅射时间下,压强为0.7Pa的Al膜结晶度最好。随着压强的减小,平均晶粒尺寸和晶格常数增大。Al films, grown on Si wafers by magnetron sputtering at different Ar pressure, were studied by optical phase-shift technology and X-ray diffraction (XRD). The results of stress analysis show that for the same sputtering time, the stress difference of Al films becomes smaller and the stress distribution becomes more uniform with decreasing Ar pressure and increasing thickness of Al film. The results of microstructure analysis show that the Al films consist of fcc-Al grains. For the same sputtering time, the crystallization of the Al films prepared at 0.7 Pa Ar pressure is the best. As the Ar pressure decreases, both of the average grain size and the average lattice constant of the Al films increase. For example, when the sputtering time is 5 min, as the Ar pressure decreases from 6 Pa to 0.7 Pa, the mean grain size increases from 15.6 nm to 20.4 nm and the average lattice constant increases also.

关 键 词：Al膜 微结构 应力和 压强 直流磁控溅射法 硅基 AR X射线衍射法 平均晶粒尺寸 光学相移法 应力分布 面心立方 晶体结构 晶格常数 分析表 时间 膜厚度 应力差 结晶度 制备 氩气 减小 增大 多晶 

分 类 号：TQ153.3[化学工程—电化学工业] O348.1[理学—固体力学]