Thin relaxed SiGe layer grown on Ar^+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition  

作　　者：CHENChang-Chun YUBen-Hai LIUJiang-Feng CAOJian-Qing ZHUDe-Zhang 

机构地区：[1]CollegeofPhysicsandElectronicEngineering,XinyangNormalUniversity,Xinyang464000 [2]ShanghaiInstitnteofAppliedPhysics,theChineseAcademyofSciences,Shanghai201800

出　　处：《Nuclear Science and Techniques》2005年第3期149-152,共4页核技术（英文）

基　　金：Partially supported by the National Natural Sciences Foundation of China (No.10075072)

摘　　要：Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different ener- gies (30 keV,40 keV and 60 keV) at the same implanted dose (3×1015cm-2) were grown by ultra high vacuum chemi- cal vapor deposition (UHVCVD). Rutherford backscattering/ion channeling (RBS/C),Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C demonstrate that these thin Si0.81Ge0.19 films were epitaxially grown on the Ar+ ion implanted Si substrates,although there existed lots of crystal defects. The relaxation extent of Si0.81Ge0.19 films on the Ar+ implanted Si substrates is larger than that in the unimplanted case,which were verified by Raman spectra. Considering the relaxation extent of strain,surface roughness and crystal defects in these SiGe films,the thin relaxed SiGe film on the 30 keV Ar+ implanted Si substrate is optimal.Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different ener- gies (30 keV,40 keV and 60 keV) at the same implanted dose (3×1015cm-2) were grown by ultra high vacuum chemi- cal vapor deposition (UHVCVD). Rutherford backscattering/ion channeling (RBS/C),Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C demonstrate that these thin Si0.81Ge0.19 films were epitaxially grown on the Ar+ ion implanted Si substrates,although there existed lots of crystal defects. The relaxation extent of Si0.81Ge0.19 films on the Ar+ implanted Si substrates is larger than that in the unimplanted case,which were verified by Raman spectra. Considering the relaxation extent of strain,surface roughness and crystal defects in these SiGe films,the thin relaxed SiGe film on the 30 keV Ar+ implanted Si substrate is optimal.

关 键 词：约束松弛 真空化学蒸气沉积 离子注入 锗化硅 半导体薄膜 

分 类 号：O484.1[理学—固体物理]