InGaAs/GaAs应变异质结中的反常离子沟道效应  

ANOMALOUS ION CHANNELING EFFECTS IN InGaAs/GaAs STRAINED HETEROJUNCTIONS

作　　者：吴春武 殷士端[1] 张敬平[1] 肖光明[1] 刘家瑞[2] 朱沛然[2] 

机构地区：[1]中国科学院半导体研究所 [2]中国科学院物理研究所

出　　处：《物理学报》1989年第1期83-90,共8页Acta Physica Sinica

摘　　要：用5.8,3.0和1.2MeV的Li离子对用MBE制备的In_(0.25)Ga_(0.75)As/GaAs(100)异质结在(100)面中沿[100]及[110]轴进行角扫描。5.8MeV时,[110]轴外延层与衬底沟道对准角的差值为0.90°,从而计算出其晶格失配度为1.62％。3.0MeV时,背散射角扫描谱出现了严重的不对称现象。若离子以1.2MeV入射,沟道对准角的差值及衬底沟道的半角宽大大地偏离实际值。本文对以上反常现象从物理机理上进行了分析,给出了这些反常离子沟道效应产生的原因和条件。The 5.8, 3.0 and 1.2 MeV Li ions were used to study the MBEIn0.75Ga0.75As/GaAs (100) sample. Ion channeling angular scans about[100] and [110] axes were carried out in the (100) plane. It is found that in the case of 5.8 MeV, the critical angle of the epilayer is almost the same as that of the substrate and the angle misalignment between them is 0.90° for axis [110] , corresponding to the misfit of sample being 1.62%, in good agreement with theoretical calculation. In the 3.0 MeV case, serious asymmetry have been observed in RBS/Channeling angular scan; in the 1.2 MeV case, the angular misalignment is reduced to 0.50?and the critical channeling angle of substrate is increased significantly. We have studied and discussed the physical mechanism of these anomalous phenomena in detail, and present a good interpretation of the experimental results.

关 键 词：应变异质结 反常离子 沟道效应 

分 类 号：TQ133.5[化学工程—无机化工]