Ⅲ-Ⅴ族混合晶体的长波长光学声子  

Long-wavelength optical phonons of Ⅲ-Ⅴ mixed crystals

作　　者：李华兵[1] 范广涵[1] 陈练辉[1] 吴文光[1] 熊予莹[2] 刘颂豪[3] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]华南师范大学物理系,广东广州510631 [3]华南师范大学信息光电子科技学院,广东广州510631

出　　处：《量子电子学报》2005年第3期440-445,共6页Chinese Journal of Quantum Electronics

基　　金：国家科技攻关计划基金(00-068)

摘　　要：在修正的随机元素等位移-MREI模型的基础上建立了一个新模型,计算了AB1-xCx型Ⅲ-Ⅴ族半导体混晶的长波长光学声子模频率的组分变化关系。模型中假设次邻力常数远小于近邻力常数,同时,运用离子晶体结合的重叠排斥能,估算出两个近邻力常数随组分x呈负幂指数变化,而非常规的线性变化。最后比较了AsAl1-xGax、GaP1-xAsx和SbAl1-xGax三种混晶的理论结果和实验数据,两者符合较好。On the basis of the modified random element isodisplacement (MREI) model, a new model is set up. The dependence between the long-wavelength optical phonon frequencies and the composition of mixed crystals XB1-xCx belonged to Ⅲ-Ⅴ semiconductors is calculated. The second neighbor force constants are assumed to be far less than the first ones. Instead of a linear variation, the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination. At last the calculated result of three mixed crystals, AsAl1-xGax, GaP1-xAsx and SbAl1-xGax, is found to be in good accordance to the experiments.

关 键 词：光电子学 III-V族混晶 MREI 光学声子 近邻力常数 

分 类 号：O471[理学—半导体物理]