Zn掺杂n型硅材料的补偿研究  

Compensation Study of Zn Doped n-type Silicon Materials

作　　者：蔡志军[1] 巴维真[1] 陈朝阳[1] 崔志明[1] 丛秀云[1] 

机构地区：[1]中国科学院新疆理化技术研究所

出　　处：《电子元件与材料》2005年第6期24-26,共3页Electronic Components And Materials

基　　金：乌鲁木齐市科技攻关计划项目(G041202);中国科学院"西部之光"人才培养计划项目

摘　　要：为了获得不同补偿度的硅材料,采用高温气相扩散的方法,在n型硅中掺杂深能级杂质Zn,得到各种电阻率(在25℃下)的补偿硅。实验表明,对具有不同初始电阻率的硅材料,扩散后电阻率随扩散温度和杂质投入量的不同都有较大变化,而且随杂质投入量的增加,电阻率都有一个急剧变化的转折点。In order to obtain compensated silicon having different compensation degrees, deep level Zn impurities were doped in n-type silicon using high temperature gaseous diffusion method. Compensated silicon materials having various resistivities (at 25℃) were obtained. It is show that resistivities after diffusion vary significantly with the increase of diffusion temperature and the quantity of diffusant for the materials having different initial resistivities. There is a turning point, where resistivity varies rapidly with the increase of diffusant quantity.

关 键 词：电子技术 深能级杂质 反型 固溶度 亨利定律 电离 

分 类 号：TN305[电子电信—物理电子学]