单片低噪声放大器的设计及其在数字T/R组件中的应用  

Design of a Monolithic Low Noise Amplifier and Its Application in Digital T/R Modules

作　　者：陈兴国[1] 李佩[2] 刘同怀[1] 黄鲁[1] 

机构地区：[1]中国科学技术大学,安徽合肥230026 [2]中国电子科技集团公司第三十八研究所,安徽合肥230031

出　　处：《微电子学》2005年第3期326-328,共3页Microelectronics

摘　　要：采用GaAsPHEMT工艺,研制了单片宽带低噪声放大器。着重探讨了单片低噪声放大器在相控阵雷达数字T/R组件中应用的特殊要求,电路的工作原理与设计方法,以及ADS软件的仿真和优化;给出了主要技术指标和测试结果。最后,介绍了单片低噪声放大器在数字T/R组件中的应用。A monolithic broadband low noise amplifier (LNA) based on GaAs PHEMT technology is developed.The operational principle of the LNA and its design method are described,as well as the simulation and optimization using ADS software.Special requirements of LNA for digital T/R modules in phased array radars are discussed in particular.Specification and test results of the circuit are given.Finally,application of the LNA to digital T/R modules is presented.

关 键 词：低噪声放大器 砷化镓 异质结高电子迁移率晶体管 T/R组件 

分 类 号：TN722.3[电子电信—电路与系统]