催化剂辅助化学气相沉积法制备准单晶ZnO纳米线  

Synthesis of ZnO Nanowires by Catalysts Assistant Chemical Vapor Deposition Method

作　　者：孙小松[1] 余洲[1] 王帅[2] 杨治美[2] 晋勇[1] 何毅[3] 杨文彬[1] 龚敏[2] 

机构地区：[1]四川大学材料科学系,四川成都610064 [2]四川大学微电子技术四川省重点实验室,四川成都610064 [3]四川大学分析测试中心,四川成都610064

出　　处：《半导体光电》2005年第3期216-218,222,共4页Semiconductor Optoelectronics

基　　金：四川省科技厅应用基础研究项目(01GY051-21).

摘　　要：利用Au催化辅助化学气相沉积生长技术,在nSi(111)衬底上制备了准单晶的ZnO纳米线。X射线衍射分析的结果表明,ZnO纳米线具有明显的沿(0001)方向定向生长的特征。扫描电子显微镜分析表明,ZnO纳米线的典型直径约为100nm,长度为2～5μm。讨论了Au催化辅助化学气相沉积生长技术制备ZnO纳米线的原理。ZnO nanowires have been grown on Au coated n-Si (111) substrates by chemical vapor deposition and Au catalytic technology. The structure and morphology of ZnO nanowires had been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It is found that ZnO nanowires are highly orientedly grown in the direction of (0001). SEM images of ZnO nanowires have shown that the typical diameter and length of ZnO nanowires are 100 nm and 2-5 μm, respectively. The growth mechanism of ZnO nanowires has also been discussed.

关 键 词：ZNO纳米线 化学气相沉积 催化辅助生长技术 定向生长 XRD SEM 

分 类 号：TN304.21[电子电信—物理电子学]