基于CMOS工艺的横向多晶硅p^+p^-n^+结红外微测辐射热计  

INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p^+p^-n^+ JUNCTION BASED ON STANDARD CMOS PROCESSES

作　　者：陈二柱[1] 梁平治[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与毫米波学报》2005年第3期227-230,共4页Journal of Infrared and Millimeter Waves

摘　　要：基于多晶硅pn结正向压降的温度特性,应用标准CMOS工艺,结合体硅微机械加工技术,研制成功非制冷红外微测辐射热计.本文详细分析了横向多晶硅p+p-n+结的温度特性,给出了正向压降温度变化率的理论表达式和实验测量值;并描述了微测辐射热计的设计思路和制作工艺.实验结果表明:在室温(284～253K)附近,横向多晶硅p+p-n+结正向压降的温度变化率为1.5mV/K;在3～5μm红外波段,微测辐射热计的电压响应率为5.7×103V/W,黑体探测率D为1.2×108cm.Hz1/2.W-1.By using standard CMOS processes and bulk micromaching technology, a uncooled infrared microbolometer detector based on the temperature character of the lateral polysilicon p(+)p(-)n(+) junction Was developed. The temperature characteristic of the polysilicon p(+)p(-)n(+) junction's foreword bias were analyzed in detail. The theoretic expression and experimental data of the temperature rate of change of forward voltage drop were presented. The design ideas and fabrication processes were given. The temperature coefficient of the foreword voltage at a constant current is 1.5mV/K at various temperatures in the range of 284K to 253K. The responsivity and detectivity (D*) are 5.7 x 10(3) V/W and 1.2 x 10(8) cm. Hz(1/2). W-1 in 3 similar to 5 mu m IR radiation band, respectively.

关 键 词：横向多晶硅p^+p^-n^+结 温度变化率 CMOS工艺 红外微测辐射热计 

分 类 号：TN4[电子电信—微电子学与固体电子学] TN215