一类半导体方程组整体弱解的存在性  

Existence of Global Weak Solutions to a Class of Semiconductor Equations

作　　者：孙福芹[1] 

机构地区：[1]天津工程师范学院数理与信息科学系,天津300222

出　　处：《天津师范大学学报（自然科学版）》2005年第2期50-53,共4页Journal of Tianjin Normal University：Natural Science Edition

基　　金：教育部科技基金资助重点项目(104090)

摘　　要：考虑一类半导体方程组的混合初边值问题。利用正则化算子和逼近过程,通过一系列先验估计,在迁移率既不为常数,又不满足速度饱和的条件下,证明了其整体弱解的存在性.<Abstrcat> Some mixed initial boundary value problems of the semiconductor equations were studied. Using the regularization operator and approach process and a series of prior estimates, the existence of the global weak solutions was proved under the conditions that the mobility neither equals to a constant nor satisfies velocity saturation.

关 键 词：半导体方程 混合边值 整体弱解 正则化算子 

分 类 号：O175.29[理学—数学]