二氧化硅的反应离子刻蚀  

Reactive Ion Etching of SiO_2

作　　者：郝慧娟[1] 张玉林[1] 卢文娟[1] 

机构地区：[1]山东大学控制科学与工程学院,山东济南250061

出　　处：《电子工业专用设备》2005年第7期48-51,共4页Equipment for Electronic Products Manufacturing

基　　金：国家自然科学基金重大研究计划资助项目(90307003);山东省自然科学基金资助项目(Y2003C03);山东省科技攻关计划基金资助项目(022090105)

摘　　要：对电子束曝光和反应离子刻蚀(RIE)进行了研究。刻蚀使用JR-2B型溅射-刻蚀机,分别采用100W、150W、200W、250W、300W的功率,对SiO2进行了刻蚀,反应气为:CHF3,对影响刻蚀的射频功率以及压力、气体流量等工艺参数作了调整,得出了刻蚀速率与射频功率和压力之间、气体流量的关系曲线。实验结果表明:随着射频功率、压力的增大,刻蚀速率不断加快,在某一值上达到最大值。再继续增加射频功率、压力,刻蚀速率反而会下降。随着气体流量的增加,刻蚀速度不断降低。Electron beam lithography and Reactive Ion Etching are studied. With the JR-2B, SiO2 is etched , the RF power are 100 W?150 W?200 W?250 W?300 W respectively, the reactive gas is CHF3. We adjusted the craft parameter RF power, pressure, flow of the gas which is correlated to the etching. The relation between etching rate and RF power pressure, flow of the gas is gained. The experiment shows: With the increase of RF power, pressure, the etching rate increases greatly, and gets to the maximum value at the certain point. If the RF power, pressure are continued to increase, the etching rate decrease. With the increase of flow of the gas, the etching rate decreases continually.

关 键 词：电子束曝光 反应离子刻蚀 RF功率 

分 类 号：TN305.7[电子电信—物理电子学]