SiGe异质结双极晶体管基区渡越时间分析  

Base Transit Time of Si/SiGe Heterojunction Bipolar Transistor

作　　者：苏文勇[1] 李蕊[1] 邵彬[1] 

机构地区：[1]北京理工大学理学院,北京100081

出　　处：《北京理工大学学报》2005年第6期522-525,共4页Transactions of Beijing Institute of Technology

基　　金：国家自然科学基金资助项目(10374007)

摘　　要：对SiGe异质结双极晶体管(HBT)的基区渡越时间进行了计算和分析,考虑了基区掺杂和Ge组分分布对本征载流子浓度和电子迁移率的影响,以及大电流密度下产生的感应基区(CIB)的渡越时间.结果表明,Ge组分为转折点X1/Wb≈0.12的矩形-三角形分布时,可得到最小的基区渡越时间;Ge分布对SiGe和Si的有效态密度之比的影响很小,但对迁移率的影响较大;基区掺杂为指数分布或高斯分布对基区渡越时间影响很小.<Abstrcat> The base transit time of SiGe heterojunction bipolar transistor(HBT) is calculated and analysed. The effects on the intrinsic carrier concentration of the SiGe base and the electron mobility are considered which are caused by the base doping and Ge profile. The transit time of currents induced base(CIB) at the high current density is also considered. The results show that the box-triangular Ge profile with X_1/W_b≈0.12 gives the minimum base transit time, Ge profile has little effect on the effective density of states and quite an effect on the electron mobility, and it has little effect on the base transit time whether the base doping profile is exponential or Gaussian.

关 键 词：SIGE异质结双极晶体管 基区渡越时间 Ge分布 

分 类 号：TN322.8[电子电信—物理电子学]