GaAs亚微米自对准工艺技术研究  

A GaAs Submicron Self-aligned Fabrication Technology

作　　者：陈克金[1] 顾炯[1] 盛文伟[1] 毛昆纯[1] 林金庭[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第2期161-167,共7页Research & Progress of SSE

基　　金：国家自然科学基金

摘　　要：总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。A fabrication technology of planar self-aligned fully ion implantation on 50 mm GaAs wafers is described in this paper. The research achievements of some key processings, including ion implantation, self-aligned refractory gate, PECVD passivation film, dry etching,planar resistor and MIM capacitor are especially given. A satisfying yield on 50 mm GaAs wafers was obtained due to the high uniformity and reproducibility. Using this technology,we have fabricated several kinds of GaAs ICs and GaAs power MESFETs with good performance. This proves that the selection of the subject has an important meaning for the development of the GaAs iC in our country.

关 键 词：自对准 离子注入 平面工艺 砷化镓 

分 类 号：TN305.3[电子电信—物理电子学]