InGaAs／GaAs异质结构材料及器件应用  

InGaAs/GaAs Heterostructures and Their Applications for HFETs

作　　者：彭正夫 张允强[1] 龚朝阳 高翔[1] 孙娟[1] 吴鹏[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第3期205-208,共4页Research & Progress of SSE

摘　　要：概述了ＩｎＧａＡｓ／ＧａＡｓ异质结构材料用于制作微波器件的优越性，叙述了材料的ＭＢＥ生长、输运特性和掺杂分布，以及用于制作Ｋｕ波段低噪声高增益ＨＦＥＴ的结果：栅长０．５μｍ，１２ＧＨｚ下噪声系数０．９３ｄＢ，相关增益９ｄＢ。This paper outlines the advantages of InGaAs/GaAs heterostructure transistors over GaAs MESFETs or HEMTs,and describes MBE growth technology,Hall effect and electrochemical C-V profiles.We have successfully developed low-noise highgain HFETs using InGaAs/GaAs heterostructure.The 0. 5 μm gate length HFETs with 0.93 dB noise figure and 9 dB associated gain at 12 GHz have been obtained.

关 键 词：微波器件 异质结构 INGAAS/GAAS 

分 类 号：TN61[电子电信—电路与系统]