多层硅外延中自掺杂现象研究  

A Study on the Auto-doping Phenomenon in Multi-layer Epitaxial Silicon

作　　者：王向武[1] 陆春一[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第3期267-271,共5页Research & Progress of SSE

摘　　要：探讨了多层硅外延中的自掺杂现象，研究了自掺杂的产生机理，分析了工艺条件对自掺杂的影响，提出了减小自掺杂的几种方法。In this paper,the auto-doping phenomenon in multi-layer epitaxial Si has been studied. Forming mechanism of the auto-doping has been investigated.The effect of growth conditions on the auto-doping has been analyzed. Several ways to reduce the auto-doping have been given.

关 键 词：硅外延 自掺杂 多层结构 

分 类 号：TN304.12[电子电信—物理电子学]