本征α－Si∶H　MIS结构电导机制  

The Conductance Mechanisms of Intrinsic α-Si:H MIS Structure

作　　者：刘坤[1] 褚君浩[1] 孙剑[2] 李标[1] 汤定元[1] 

机构地区：[1]中科院上海技术物理研究所红外物理国家实验室 [2]中科院上海硅酸盐研究所

出　　处：《固体电子学研究与进展》1994年第4期335-341,共7页Research & Progress of SSE

摘　　要：利用本征α－Ｓｉ：Ｈ薄膜材料制成了Ａｌ－Ｓｉ（１－ｘ）Ｎｘ－ａ－Ｓｉ：Ｈ金属－绝缘体－半导体结构，用高精度差分电容谱仪在５０℃和暗背景条件下测量了这种结构的变频电容谱及变频电导谱。讨论了该ＭＩＳ结构中可能存在的电导机制，计算了禁带态能谱并根据修正后的实验结果得到了其俘获电子的时间常数及截面。A series of metal-insulator-semiconductor structures, where amorphous silicon is substitute for semiconductor,have been fabricated on the a--St: H film material grown with glow-discharge (GD) technique. At the temperature of 50℃ and in the dark background,the frequency dependent capacitance-voltage and conductance-voltage spectra have been obtained with the high precision differential capacitance spectrometer. Based on the experimental data, the density of the gap states and both its response time and electron capture cross-section have been derived. In the same time,the possible conductance mechanisms have also been discussed.

关 键 词：α-Si∶HMIS结构 电导机制 俘获时间 俘获截面 禁带态密度 

分 类 号：TN386.4[电子电信—物理电子学]