H_2/CH_4/H_2S/Ar气氛合成n型金刚石薄膜过程中硫分布的数值模拟  

Numerical Simulations of Particle Distributions for Sulfur Doped n-type Diamond Thin Film in the Mixture of H_2/CH_4/H_2S/Ar

作　　者：南景宇[1] 赵庆勋[1] 乔晓东[1] 闫正[1] 刘保亭[1] 张靖[1] 

机构地区：[1]河北大学物理科学与技术学院

出　　处：《河北大学学报（自然科学版）》2005年第4期369-372,398,共5页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目(503130)

摘　　要：本工作采用Monte Carlo方法,根据辉光放电理论,对以H2S为掺杂源气体采用EACVD技术合成n型硫掺杂的金刚石薄膜的动力学过程进行了模拟.得出不同气压、偏压情况下n型硫掺杂的金刚石薄膜的动力学过程中掺杂元素S和S+粒子数分布,计算结果对掺杂过程的研究具有参考价值.Monte Carlo simulations are adopted to study the dynamic process of n-type diamond film doped in the gas of H_2S based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The dynamic process of n-type dope diamond film is simulated under different gas pressure and bias voltage. The particle distributions of S and S^+ have been obtained. The result is very important for investigation of n-type diamond film doping at low temperature.

关 键 词：Monte CARLO方法 金刚石薄膜 N型掺杂 EACVD 

分 类 号：O53[理学—等离子体物理]