磁控溅射法制备硅钼薄膜及其性能表征  

Properties of Si/Mo Thin Films Deposited by Magnetron Sputtering Method

作　　者：张茂国[1] 陈华[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《稀有金属材料与工程》2005年第7期1158-1161,共4页Rare Metal Materials and Engineering

摘　　要：用射频磁控溅射法在硅基底上成功制备出具有低电阻率的单一四方相二硅化钼薄膜,并通过X射线衍射仪、原子力显微镜及四探针电阻测试仪对退火前后的薄膜样品进行了结构和电学性能分析。结果表明:薄膜的电学特性强烈依赖于薄膜的微结构和相组成。沉积态薄膜主要为非晶结构。经高温退火后,薄膜的晶态结构发生显著的变化,晶化效果明显提高,薄膜方阻大幅降低。Various processes of the Mo/Si thin films deposited on Si (001) substrates by RF magnetron sputtering technique were carefully investigated and the MoSi2 thin film with the single tetragonal phase and low resistivity was successfully prepared. X-ray diffraction, scanning electrical microscopy, atomic force microscope and Four-probe resistance meter were used to determine their structures, surface morphologies and electrical properties. Results show that the electrical property of the Mo/Si films depends strongly upon their microstructure and the phase composition. The as-deposited film mainly belongs to amorphous. After annealing at the high temperature. The great change of the film crystallization structure takes place, and its phase composition varies with the as-deposited processes. The effect of the crystallization enhances obviously, and the square resistance of the film drops greatly.

关 键 词：磁控溅射 二硅化钼 薄膜 电阻率 

分 类 号：TB43[一般工业技术]