用喇曼光谱研究半导体带隙和合金组分  

Studies and Determinations on Energy Gaps and Alloy Compositions of Semiconductors by Raman Spectroscopy

作　　者：连世阳[1] 杨锦赐 廖远琰[2] 

机构地区：[1]厦门大学物理学系 [2]厦门大学化学系

出　　处：《厦门大学学报（自然科学版）》1989年第5期484-488,共5页Journal of Xiamen University：Natural Science

基　　金：福建省自然科学基金

摘　　要：阐述了从喇曼光谱测量三元化合物半导体的双模频移和双模强度比率来确定含金组分。提出了由共振喇曼散射研究半导体的能带结构。实验观测了半导体 GaP在间接带隙(Γ_8?—Χ_(3c))附近的2TA和2TO双声子共振特性。实验表明共振喇曼散射可以测定半导体的直接带隙和间接带隙。A method has been developed for determining the alloy compositions of ternary Ⅲ-Ⅴ compoudn semiconductors by measuring their Raman spectroscopy and the intensity ratio of the two mode behaviour for the long-wavelength optical phonons, A method ats6 is presented for studying the energy band structure of semiconductors by resonant Raman scattering. Resonant behaviour of two-TA and two-TO-phonon modes at the indirect gap (γ80-X3C) are investigated for GaP.

关 键 词：喇曼光谱 半导体带隙 合金组分 

分 类 号：O471.5[理学—半导体物理]