12keV低能砷离子注入硅的损伤分布  

Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon

作　　者：张旭[1] 莫党[1] 林成鲁[1] 何治平[1] 

机构地区：[1]中山大学物理学系,中国科学院上海冶金研究所

出　　处：《中山大学学报（自然科学版）》1995年第2期27-31,共5页Acta Scientiarum Naturalium Universitatis Sunyatseni

摘　　要：测量了１２ｋｅＶ注入能量、８×１０￣（１４）～２×１０￣（１５）／ｃｍ￣２剂量砷离子注入硅的椭偏光谱，并用最优化拟合算法从椭偏光谱定出损伤分布。这种低能量离子注入的结果表明，损伤分布呈现为平台型，体内不出现峰值，损伤深度为１２．５～１６．０ｎｍ，与背散射沟道技术测定结果相符合。Damage profiles for l2keV,8 × 10￣(14)～2× 10￣(15)/cm￣2 As￣+ implanted Si samplesare determined by suitably optimizing the ellipsometric spectra. It is shown for the caseof very low energy iniplantation that the damage profile is plateau type and that there isno inside peak structure,The depth of damage is determined to be 12.5～16.0nm,which is consistent with the result measured by RBS/C technique,The ellipsometricspectroscopy is shown to be advantageous over RBS/C technique in resolution,thusproviding more details of dalnage profile with this work.

关 键 词：椭偏光谱 离子注入 损伤分布 半导体器件 砷离子 

分 类 号：TN305.2[电子电信—物理电子学]