InGaAs／GaAs和InGaAs／AlGaAs应变层量子阱中的子带弛豫过程  

INTERSUBBAND RELAXATION IN InGaAS/Geds AND InGaAS/AIGaAS STRAINED-LAYER QUANTUM WELLS

作　　者：金世荣[1] 罗晋生[1] 褚君浩[1] 徐仲英[1] 袁之良[1] 罗昌平[1] 许继宗[1] 郑宝真[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,中国科学院半导体研究所超晶格和微结构国家实验室,西安交通大学微电子研究室

出　　处：《红外与毫米波学报》1995年第3期237-240,共4页Journal of Infrared and Millimeter Waves

摘　　要：利用时间分辨光谱技术，在１１～９０Ｋ温度范围研究了不同阱宽的ＩｎＧａＡｓ／ＧａＡｓ和ＩｎＧａＡｓ／ＡＩＧａＡｓ应变层量子阱子带弛豫过程，讨论了这两种量子阱材料中不同散射机制的作用．The dynamics of the intersubband relaxation of carriers in the InGaAs/GaAs and InGaAs/AIGaAs quantum wells with different well-widths was investigated with the use of time-resolved spectroscopy in the temperature range from 11 to 90K.The different scattering mechanisms,which are dominant in the carriers relaxation processes in the quantum wells of the two systems were discussed.

关 键 词：子带间弛豫 应变层量子阱 铟镓砷 激子 

分 类 号：O471.3[理学—半导体物理]