低温NMOSFET的解析模型  

An Analytical Model for Low-temperature NMOSFET's

作　　者：刘卫东[1] 魏同立[1] 

机构地区：[1]东南大学微电子中心

出　　处：《固体电子学研究与进展》1995年第1期33-40,共8页Research & Progress of SSE

基　　金：国家自然科学基金

摘　　要：利用缓变沟道近似（ＧＣＡ）及准二维分析，提出了在７７～２９５Ｋ温区工作的ＮＭＯＳＦＥＴ的解析模型。建模中不仅考虑迁移率蜕变（电场引起）、载流子速度饱和及沟道调制效应，而且计入温度相关参数的温度特性。模拟结果显示了该模型的正确性及其在低温热载流子效应中的应用潜力。An analytical model for the operation of NMOSFET's in the temperature range 77-295 K is proposed by incorporating gradual channel approximation(GCA) and pseudo-two-dimentional analysis. Second-order effects such as mobilitydegradation, carrier velocity saturation and channel-length modulation are taken into account. The dependence of parameters on temperature is included in the analysis. Simulation re$ults show the correctness of the proposed model and its potentialof application in the study. of low-temperation hot-carrier effects.

关 键 词：低温 MOSFET 模型 MOS器件 

分 类 号：TN386.1[电子电信—物理电子学]