单片式ZnO/Si pn结二极管存储相关器/卷积器  

Monolithic ZnO/Si pn Junction Diode Storage Correlator/Convolver

作　　者：周子新[1] 杨龙其 杨宏伟[1] 谢兵[1] 何世平[2] 曹光军[2] 

机构地区：[1]四川压电与声光技术研究所 [2]东南大学

出　　处：《压电与声光》1989年第5期1-5,共5页Piezoelectrics & Acoustooptics

摘　　要：本文报道在我国首次制成一种单片式金属-ZnO-SiO_2-Si(MZOS)结构存储相关器/卷积器。它既可用作卷积器,也可用作存储相关器。阐明了pn结二极管存储机理,叙述了该器件的基本设计,制作方法和性能参数。器件的中心频率为77MHz,带宽为7MHz,互作用时间是5.2μs,卷积效率达-63dBm。把该器件用于扩频通信的解扩实验,证明抗干扰能力强。最后提出了改进性能的方法和措施。This paper presents a storage correlator/convolver with monolithic metal-ZnO-SiO2-Si (MZOS)structure developed in a first time in our country. It can be used either as a convolver or a storage correlator. The storage mechanism of pn junction diode is illustrated and the basic design of the device,manufacture methods as well as its performance parameters are also described.Results show that this device is of 77MHz center frequency, 7MHz bandwidth, 5.2us interaction time and of - 63dBm convolution efficiency. The deexpanding experiment in the expanding spectrum conmmu-nication shows that the device has a strong immunity to the interference. Finally, the way to improve the performance of the device is proposed.

关 键 词：声表面波器件 PN结二极管 存储器 

分 类 号：TN65[电子电信—电路与系统]