16元非晶硅荧光探测器的结构和工艺  

Structure and technology of 16 element α-Si:H fluorescent detector

作　　者：王长安[1] 徐重阳[1] 周雪梅[1] 张少强[1] 赵伯芳[1] 邹雪城[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《半导体光电》1995年第1期48-52,共5页Semiconductor Optoelectronics

摘　　要：研究一种新型的非晶硅ＰＩＮ异质结荧光探测器的结构和制备工艺，详细讨论了探测器单元的结构优化设计和暗电流和灵敏度等特性。实验表明，采用α－ＳｉＣ／α－Ｓｉ异质结构，提高淀积非晶硅基薄膜的本底真空度，优化制备工艺，可制备高信噪比的非晶硅荧光探测器。The structure and preparation of the fluorescent detector consisting of 16 α-Si:H PIN heterojunction photodiodes are given.The optimum design and device characteristics such as dark current and sensitivity are discussed in detail.Experimental results show that the fluorescent detector with high signal-to-noise ratio can be obtained by α-Si :H PIN heterojunctoin in terms of optimum fabrication technology.

关 键 词：非晶半导体 异质结 荧光探测器 PIN光电二极管 

分 类 号：TN304.805[电子电信—物理电子学]