1．3μmInGaAsP／InPLD，SLD和LED的介质镀膜  

Dielectric coatings on 1. 3μm InGaAsp/InP LDs,SLDs and LEDs

作　　者：罗江财[1] 朱志文[1] 王剑格 唐祖荣[1] 

机构地区：[1]重庆光电技术研究所

出　　处：《半导体光电》1995年第2期163-170,共8页Semiconductor Optoelectronics

基　　金：电科院资助

摘　　要：简要叙述了介质镀膜对半导体激光器性能的影响。在１．３μｍＩｎＧａＡｓＰ／ＩｎＰ激光器（ＬＤ）、超辐射发光二极管（ＳＬＤ）和发光二极管（ＬＥＤ）上进行了大量的Ａｌ２Ｏ３和ＺｒＯ２减反射膜的工艺研究。结果表明，该减反射膜使激光器阈值电流增加，并将部分激光器变成了超辐射发光二极管。减反射膜还显著地改进超辐射发光二极管的性能，增加其输出功率。它也能导致发光二极管的输出功率的有效增加。The effect of the dielectric coatings on semiconductor laser performance is presented.Technological study on Al2O3 and ZrO2 antireflection coatings has been carried out on 1.3μm InGaAsP/InP laser diodes(LDs),superluminescent diodes(SLDs)and light emitting diodes(LEDs).The results show that antireflection coatings can increase the threshold current of the laser and change a part of laser into superluminescent diode.The antireflection coatings can improve the performance of superluminescent diode,increase remarkably the output power and can also result in a significant increase in the output power of light emitting diode.

关 键 词：半导体激光器 发光二极管 减反射膜 真空淀积 

分 类 号：TN248.4[电子电信—物理电子学]