热壁外延制备的n－PbTe／p－Si异质结特性研究  

Characteristics of HWE Grown n-PbTe/p-Si Heterojunction

作　　者：杨玉琨[1] 李文明[1] 于磊[1] 杨易[1] 徐立兴[1] 熊欣[1] 王善力[1] 黄和鸾[1] 

机构地区：[1]吉林大学分析测试实验中心,辽宁大学电子科学与工程系

出　　处：《Journal of Semiconductors》1995年第8期594-597,共4页半导体学报（英文版）

基　　金：半导体超晶格国家重点实验室资助

摘　　要：本文报道了首次用热壁外延（ＨＷＥ）方法，在Ｓｉ（１００）衬底上，制备ｎ－ＰｂＴｅ／ｐ－Ｓｉ异质结的工艺及测试结果．由Ｘ－射线衍射谱确认，ＰｂＴｅ外延层是单晶，Ｉ－Ｖ曲线表明，该异质具有良好的整流特性．由Ｃ－Ｖ测量得到异质结的内建电势差．最后算出能带偏移．Abstract The preparation of n-PbTe/p-Si heterojunction on Si(100) substrate by HWE method and some relevent measurement results are reported for the first time. X-ray diffraction spectrum shows that the PbTe epilayer is single crystal. I-V curve reveals that the heterojunction has good rectification character and low reverse current. The C-V curve was employed to get the built-in potential difference. Finally,the band offset △Ev and △Ecare calculated.

关 键 词：碲化铅 异质结 热壁外延 硅 

分 类 号：TN304.25[电子电信—物理电子学]