硼掺杂及未掺杂金刚石薄膜的电学和光电导特性  

Electrical and Photoconductive Characteristics of B-Doped and Undoped Diamond Films

作　　者：张仿清[1] 张文军[1] 胡博 谢二庆[1] 陈光华[1] 

机构地区：[1]兰州大学物理系

出　　处：《Journal of Semiconductors》1995年第10期783-788,共6页半导体学报（英文版）

摘　　要：用热丝辅助化学气相沉积法合成了未掺杂及Ｂ掺杂金刚石薄膜，测量了退火前后的电流一电压和光电导特性．实验结果表明，Ｈ原子对未掺杂金刚石膜的电学和光电导特性有很大影响．对于掺杂样品，随着Ｂ含量的增高，Ｂ的作用更加明显，而Ｈ的作用降低．合成的金刚石膜中存在着各种缺陷态，其中包含陷阶型缺陷态，它影响着光电导饱和值的大小和弛豫时间的长短．经６００℃退火后，样品的结构、缺陷态的种类、数量都发生变化，并改变了金刚石膜的电学及光电导特性．Abstract B-doped and undoped diamond films were deposited by hot filament CVD,the I-V and photoconductive characteristics were Investygated.The experimental results show that H atoms have great effects on the I-V and photoconductive characteristics of undoped diamond films. For B-doped samples,the effects of B impurity increase,and the effects of H atoms decrease with the increase of B concentration.There are various kinds of defects in the diamond films,some of them ac as traps,which affect the saturated values and thd relaxation time of photoconductivity.After annealing at 600℃,the atructure of the samples,the kinds and the amounts of the defect states changed,leading to the variations of the electrical and photoconductive properties of the samples.

关 键 词：金刚石薄膜 电学 光电导 掺杂 硼 

分 类 号：TN304.18[电子电信—物理电子学] O472.4[理学—半导体物理]