77K　NMOSFET沟道热载流子注入效应  

Effects of Channel Hot-Carrier Injections in NMOSFET's at 77K

作　　者：刘卫东[1] 李志坚[1] 刘理天[1] 魏同立[1] 

机构地区：[1]清华大学微电子学研究所,东南大学微电子中心

出　　处：《Journal of Semiconductors》1995年第11期849-853,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：通过综合测试７７Ｋ和２９５Ｋ下先电子后空穴以及先空穴后电子注入时阈值电压和平带电压漂移以及Ｉ－Ｖ特性的蜕变，研究了ＮＭＯＳＦＥＴ中电荷俘获、界面态产生以及器件蜕变的低温特性和机制．提出的界面蜕变模型成功地解释了低温下ＮＭＯＳＦＥＴ热载流子增强蜕变的微观机制．Abstract A combined measurement method for different channel hot-carrier injection sequences is employed to investigate the 77K hot-carrier effects in NMOSFET's. Lowtemperature behavior of charge trapping, interface state generation and device degradation as well as the corresponding mechanisms are well perceived. The proposed interfacedegradation model is capable of interpreting the microscopic mechanisms for the enhanced lowtemperature hot-carrier effects in NMOSFET's.

关 键 词：NMOSFET 热载流子注入 蜕变 电子注入 

分 类 号：TN386[电子电信—物理电子学]