多孔硅发光峰位波长为370nm的紫外光发射  

Ultraviolet Light Emission from Porous Silicon with Its Peak Wavelength Around 370 nm

作　　者：林军[1] 姚光庆[1] 段家 秦国刚[1] 

机构地区：[1]北京大学物理系,北京大学化学系

出　　处：《Journal of Semiconductors》1995年第12期947-950,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：对特定工艺制备的多孔硅进行干氧氧化处理，观察到光致发光峰位波长为３７０ｎｍ左右的紫外光发射．紫外光强度与高温氧化温度有关，当氧化温度为１０００℃时，多孔硅紫外光发射最强，而在１１５０℃温度下氧化５ｍｉｎ，多孔硅纳米硅粒消失后，紫外发射变得很弱．紫外光峰位与氧化温度无关，但在１０００℃氧化的多孔硅光致发光谱中出现附加的位干３６０ｎｍ的发光峰．如认为光激发主要发生在多孔硅的纳米硅粒中，而光发射主要发生在多孔硅中包裹纳米硅的ＳｉＯｘ层中的两种（或多种）发光中心上，则本文的实验能被很好解释．Abstract Ultraviolet light with a peak wavelength around 370 nm is observed from thermally oxidized porous silicon which is formed under a certain condition. The intensity of the ultraviolet light varies with the oxidation temperature and reaches a maximum at 1000℃, and gets very weak after oxidation has been Carried out at 1150℃: for 5 min and silicon nanoparticles in porour silicon have disappeored. The peak position energy of ultraviolet light does out depend on the oxidation temperature except that a new peak around 360 nm appears in addition to the 370nm peak for porous silicon oxidized at 1000℃. If presuming that the photoexcitation and the light emission mainly occurs respectively inside the silicon nanoparticle in porous silicon and in two or more types of luminescence centers in SiO2 layers .covering silicon nanoparticles, our experimental results can well be explained.

关 键 词：多孔硅 光致发光 紫外光发射 峰位波长 

分 类 号：TN304.12[电子电信—物理电子学] O472.3[理学—半导体物理]