Al＿xGa＿（1－x）A＿s和GaA＿s材料的物理参数模型  

Al_xGa(1-x)As and GaAs:Pbysical-Parameter models for use in device research

作　　者：曾峥[1] 吴文刚[1] 罗晋生[1] 

机构地区：[1]西安交通大学微电子研究室

出　　处：《电子器件》1995年第1期36-45,共10页Chinese Journal of Electron Devices

摘　　要：本文较系统和全面地总结了ＧａＡ＿ｓ和Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ材料的物理参数模型，包括介电常数、能带参数、载流子迁移率以及复合机制和寿命等，给出了易于应用的数学公式，其中Ａｌ＿ｘＧａ＿（１－ｘ）Ａ＿ｓ重掺杂能带窄变公式为本文首次推导。这些物理参数模型对于Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ／ＧａＡｓ异质结器件的研究有着十分重要的意义。The physical-paramcter models of Al_xGa_(1-x)As materials,including static and high-frequency dielectric constants,bandstructure porameters,carrier mobilities and recombinationmechanisms and lifetimes,have been discussed in detail and systematically in this paper,in whichthe formula on the bandgap narrowing in heavily doped Al_xGa_(1-x)As was deduced for the first time.These models are very significant for the research on the Al_xGa_(1-x)As/GaAs heterostructure devices.

关 键 词：ALXGA1-XAS 砷化镓 物理 参数 模型 

分 类 号：TN304.07[电子电信—物理电子学]