光伏法研究掺金硅特性  

Study on Properties of Au-Doped Silicon by Photovoltaic Method

作　　者：朱文章[1] 沈顗华 刘士毅[1] 

机构地区：[1]厦门集美航海学院物理室,厦门大学物理系

出　　处：《电子学报》1995年第2期44-48,共5页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文采用光伏方法测量掺金硅的少子寿命，掺金浓度为１０^（１２）～６．６２×１０^（１５）ｃｍ^（－３），４个数量级；根据对两类不同电阻率的Ｎ型掺金硅少子寿命系统的测量和统计计算，提出了对硅中金性质的看法。统计计算及简并因子和金施主与金受主的相关性，实验和计算结果都表明，高浓度金掺杂可以改变Ｎ型高阻硅的导电类型。The minority carrier lifetime of Au-doped silicon has been measured by photovoltaic method.The Au-doped concentrations are between 10￣(12)￣ 6.62×10￣(15)cm￣(-3),covering four orders of magnitude.On the basis of the systematic measurement and the statistical calculation of minority carier lifetime of two kinds of N-type Au-doped sihcon with different resistance,the views on the properties of Au in silicon are presented.The degeneracy factors and the interrelation between Au donor and acceptor are taken into account in statistical calculation. Both experimental and calculated results show that Au doping at high concentration can change N-type high-resistance silicon into P-type.

关 键 词：掺金硅 少子寿命 光伏 深能级 

分 类 号：TN305.3[电子电信—物理电子学]