低温高速双极晶体管基区的优化设计  

Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature

作　　者：李垚 魏同立 沈克强 

机构地区：[1]东南大学微电子中心

出　　处：《东南大学学报（自然科学版）》1995年第3期34-38,共5页Journal of Southeast University：Natural Science Edition

基　　金：国家自然科学基金

摘　　要：本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温高速双极晶体管的优化设计作了探讨。The influences of the distribution of the base doping concentration, the magnitude and thelocaton of the base peak concentration on base transit time are studied by consideruig bandgap-narrow-ing effects and carrier freeze-out effects. Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated.

关 键 词：低温 基区电阻 双极晶体管 优化设计 

分 类 号：TN322.8[电子电信—物理电子学]