减小硅外延自掺杂影响的改进的二步外延法  

Improved Two-step Silicon Epitaxial Method Reducing Autodoping Effect

作　　者：王向武[1] 陆春一[1] 马利行[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1995年第3期299-301,共3页Research & Progress of SSE

摘　　要：叙述了一种减小硅外延自掺杂影响的改进的二步外延法：减压－常压二步法。采用该方法所生长的外延层，其过渡区明显小于常规二步法的结果，和单纯减压方法所得的结果相当，外延层晶格质量明显优于单纯减压外延的结果。n improved two-step silicon epitaxial method, low pressure-atmosphere pressure method,is presented in this paper. The method can reduce autodoping effect during the epitaxy. So it can produce epitaxial layer,in which the transition region depth is obviously smaller than the one produced by conventional twostep method, and is approximately equal to the result by low pressure two-step method. The lattice quality is much better than the one grown by simple low pressure method.

关 键 词：自掺杂 减压 二步外延 硅 外延生长 

分 类 号：TN304.12[电子电信—物理电子学] TN304.054