液相外延生长超薄有源层Al_xGa_（1－x）As／GaAs分别限制双异质结构激光器  

LPE Growth of SCH LD with Ultra-Thin Active Layer

作　　者：任大翠[1] 李含轩 薄报学[1] 

机构地区：[1]长春光学精密机械学院近代光学所

出　　处：《光学学报》1995年第10期1288-1291,共4页Acta Optica Sinica

摘　　要：报道超薄有源层ＡｌｘＧａ１－ｘＡＳ／ＧａＡｓ分别限制双异质结构半导体激光器的液相外延的过程。讨论了过冷度、生长温度和降温速率等对生长速率的影响。扫描电镜测得生长温度为６８０℃时，ＧａＡｓ有源层厚度可低至２５～３５ｎｍ。宽接触分别限制双异质结构ＬＤｓ的室温连续阈值电流密度多在７００～８００Ａ／ｃｍ２。The realization of SCH multilayer structure with ultra-thin GaAs active layer using a modified graphite boat system and low temperature technology is demonstrated.Our method utilizes thin solutions and saturation wafers to achive GaAs epituxial layer in the thickness of 25～35 nm which is uniform over relatively large area. Broad-contact LDs using the above mentioned epitaxial wafers are fabricated. These devices have threshold current density of 700～800 A/cm2 at room temperature.

关 键 词：液相外延生长 超薄有源层 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]