一次低烧SrTiO_3基晶界层电容器的研究  

STUDY OF SrTiO_3-BASED GRAIN BOUNDARY-LAYER CAPACITORS SINGLE-FIRED UNDER LOW TEMPERATURE

作　　者：周和平[1] 曾剑平[1] 杜晓锋 王玲玲[1] 

机构地区：[1]清华大学材料科学与工程系

出　　处：《硅酸盐学报》1995年第4期444-447,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金

摘　　要：研究了以Ｌｉ＿２ＣＯ＿３为助烧结剂、Ｓｒ（Ｌｉ＿（１／４）Ｎｂ＿（３／４））Ｏ＿３为施主掺杂剂、Ｂｉ＿２Ｏ＿３和ＳｉＯ＿２为晶界绝缘剂的ＳｒＴｉＯ＿３基晶界层电容器的一次低温烧成技术。初步探索了Ｔｉ／Ｓｒ比值、施主掺杂剂、绝缘剂对显微结构及介电性能的影响。在１１５０℃饶成温度下，获得了ε＿（ａｐｐ）＞３．５×１０￣４；ρ＞１．０×１０￣（１１）Ω·ｃｍ；ｔｇδ＜１．０％；△Ｃ／Ｃ＜±５．０％（－２５～＋８５℃）的ＳｒＴｉＯ＿３基晶界层电容器材料。The low temperature single-firing fabrication technique of SrTiO_3-based GBLC with Li_2CO_3 assintering aid,Sr(Li_(1/4)Nb_(3/4))O_3 as donor additive and Bi_2O_3 and SiO_2 as boundary-layer insulation additive wasstudied.The effects of Ti/Sr value,donor additive and insulation additive on microstructure and dielectric proper-ties were analyzed preliminarily, The SrTiO_3-based GBLC materials with ε_(app)>3.5×10￣4,ρ>1.0×10￣(11)Ω·cm,tgδ<1.0%,△C/C(±5.0%(-25～+85℃)at 1150℃ in average were obtained.

关 键 词：钛酸锶 烧成 晶界层电容器 一次烧成 电容器 

分 类 号：TM534.1[电气工程—电器]