ZnO薄膜的制备和研究进展  

Recent advances and synthesis of ZnO thin films

作　　者：赵玉岭[1] 

机构地区：[1]郑州师范高等专科学校物理系,河南郑州450044

出　　处：《信阳师范学院学报（自然科学版）》2005年第3期344-345,361,共3页Journal of Xinyang Normal University(Natural Science Edition)

基　　金：河南省自然科学基金资助项目(0424220173)

摘　　要：ZnO作为一种新型的宽禁带半导体材料,具有很好的化学稳定性和热稳定性,抗辐射损伤能力强,在光电器件、压电器件、表面声波器件等诸多领域有着很好的应用潜力.本文介绍了ZnO薄膜的基本性质以及喷雾热分解、脉冲激光沉积、金属有机物化学气相沉积等制备ZnO薄膜的技术和方法,并着重介绍了在ZnO紫外受激发射和p型掺杂等方面的研究进展.ZnO is a novel material for wide band gap semiconductor, with good thermal and chemical stability and radiation resistance,and could be a good candidate for piezoelectric, photoelectric, and surface acoustic wave devices. In this paper, the properties of ZnO thin films and synthesize methods, such as thermal spray, pulsed laser deposition, and metal-organic chemical vapor deposition, are introduced. The progress in ultraviolet stimulated emission and p-type doping of ZnO are also discussed.

关 键 词：ZNO薄膜 紫外受激发射 P型掺杂 

分 类 号：TN451[电子电信—微电子学与固体电子学] O484.4[理学—固体物理]