新型SON器件的自加热效应  

Self-Heating Effect in Novel SON Device

作　　者：吴大可[1] 田豫[1] 卜伟海[1] 黄如[1] 

机构地区：[1]北京大学微电子学研究所,北京100817

出　　处：《Journal of Semiconductors》2005年第7期1401-1405,共5页半导体学报（英文版）

摘　　要：分析了自加热效应对SON器件性能的影响,并与SOI器件进行了比较.提出构造散热通路的方法来抑制SON器件的自加热效应,分析了不同通路情况对自加热效应的抑制程度.还对散热性能较好的具有不连续空洞埋层的SON器件进行了研究,并分析了空洞大小和横向位置偏差对器件性能的影响,为器件结构设计提供了指导.The effect of self-heating in novel SON devices,compared with that in SOI devices,is comprehensively investigated.By making thermal dissipating paths through the void layer, the self-heating effect is effectively alleviated. In addition, the influence of the width of the paths is studied. The characteristics of the SON structure with a discrete void layer, which effectiv elysuppresses the self-heating effect, are analyzed. The influence of the size and position of the discrete voids on device performance is analyzed, which gives guidelines for the device structure design.

关 键 词：silicon-on-nothing器件 自加热效应 散热通路 空洞层 

分 类 号：TN432[电子电信—微电子学与固体电子学]