一种K波段双桥电容式RF MEMS开关的设计与制作  

Design and Fabrication of K-Band Double Bridge Capacitive MEMS Switches

作　　者：雷啸锋[1] 刘泽文[1] 宣云[1] 韦嘉[1] 李志坚[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2005年第7期1442-1447,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:G1999033105)~~

摘　　要：介绍了一种K波段双桥结构的电容式RFMEMS开关.该开关的结构特点是,以共面波导上的悬空金属膜为双桥结构,并且膜桥的支撑呈折叠弹簧结构.使用AgilentADS软件对该开关进行了设计和优化,结果表明,相比传统电容式单桥开关,该开关隔离度性能得到了很大提高.利用表面微机械工艺,在高阻硅衬底上制备了开关样品.双桥开关的在片测试结果表明:驱动电压为19.5V,“开”态的插入损耗约1.6dB@19.6GHz,“关”态的隔离度约[e-mail] and fabrication of a novel K-band capacitive RF MEMS switch are reported. The switch consists of two suspended metallic membranes supported by a serpentine flexible spring over a coplanar waveguide. The design, which is realized with commercial EDA tools,is optimized based on a series of simulations. The simulations show that the proposed switch structure presents improved isolation in a relatively low RF frequency （K band）. This switch is made using a silicon surface micromachining process. On wafer measurement is carried out. The threshold voltage is less than 19.5V, the insertion loss is 1.6dB@19.6GHz,and the isolation is 46.0dB@lg. 6GHz.

关 键 词：RF MEMS 开关 双桥结构 高隔离度 

分 类 号：TN402[电子电信—微电子学与固体电子学]