ULSI中铜互连及其可靠性的研究与进展  

State of the arts Cu interconnect and its reliability in ULSI

作　　者：郝跃[1] 邵波涛[1] 马晓华[1] 韩晓亮[1] 王剑屏[2] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]中芯国际集成电路制造有限公司,上海201203

出　　处：《西安电子科技大学学报》2005年第4期627-633,共7页Journal of Xidian University

基　　金：国家"863"计划资助项目(2003AA1Z1630)

摘　　要：随着集成电路向高集成度、高可靠性方向的发展,铜互连工艺的可靠性问题逐渐显得重要.分析和比较了铜互连关键工艺,叙述了对铜互连损耗和铜通孔损耗的研究进展,对铜互连基本可靠性单元进行了讨论,指出现在仍然存在的问题,并给出了解决这些关键技术可能的方法.With the development of higher integration and reliability of IC, the reliability of copper interconnects is more important than ever. In this paper, the key processes of Cu interconnects are analyzed and compared, and the author lay emphasis on the development of the Cu interconnect and Cu vias. The present problems and discussions of fundamental reliability units of Cu interconnects are introduced. Lastly, some methods are given to solve these key problems in Cu interconnects.

关 键 词：铜互连 基本可靠性单元 可靠性技术 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]