低能离子注入和UV照射白色链霉菌的生物学效应  

Biological effects of N+ ion implantation and UV radiation on Streptomyces albus

作　　者：吴健[1] 戴桂馥[1] 李金芳[2] 赵艳珩[2] 张晓红 

机构地区：[1]郑州大学生物工程系,郑州450052 [2]郑州大学离子束生物工程省重点实验室,郑州450052 [3]濮阳泓天威药业有限公司,濮阳457100

出　　处：《核技术》2005年第8期598-602,共5页Nuclear Techniques

摘　　要：低能离子注入和UV辐射经真空处理的白色链霉菌均表现出了复杂的生物学效应。探讨了低能离子注入白色链霉菌产生的“马鞍型”注量效应曲线的形成原因。实验结果表明真空因素不是“马鞍型”注量效应曲线形成的原因,推测“马鞍型”注量效应曲线是低剂量辐射产生的HRS/IRR效应。低剂量UV辐照经真空处理的白色链霉菌仅能表现出IRR效应,同时也表现出兴奋效应(存活率>100%)。以抗链霉素突变为指标研究低能离子注入和UV辐射白色链霉菌的诱变效果的结果表明,UV是致白色链霉菌产生抗链霉素突变的有效手段。The results of bothplicate biological effects. The30 keV N^＋ ion implantation and UV irradiation of Streptomyces albus showed complicate biological effects. The “saddle shape” pattern of the dose -dependent curve formed by N^＋ ion implantation with low energy was studied, and it proved that vacuum was not the reason, and in fact, the “saddle shape”curve may be regarded as a HRS/IRR （hyper-radiosensitivity / increased radiaoresistance） effect caused by low dose irradiation.But Streptomyces albus UV irradiated after vacuum treatment only showed IRR effect or hormesis （survival rate 〉100%）. The streptomycin resistance mutation of Streptomyces albus caused by low energy N^＋ ion implantation and UV irradiation was also studied. The results showed that UV radiation is one effective means for streptomyces albus breeding.

关 键 词：离子注入 UV照射 突变 兴奋效应 HRS/IRR效应 

分 类 号：Q345.1[生物学—遗传学] Q933