大功率硅-硅直接键合静电感应晶闸管的研制  

Fabrication of Power SITH Using Silicon Direct Bonding Technology

作　　者：姜岩峰[1] 黄庆安[2] 

机构地区：[1]北方工业大学信息工程学院微电子学科,北京100041 [2]东南大学电子工程系MEMS教育部重点实验室,江苏南京210096

出　　处：《微电子学》2005年第4期416-419,共4页Microelectronics

基　　金：北京市自然科学基金资助项目(4042013)

摘　　要：文章提出了用硅硅直接键合(SDB)工艺替代静电感应晶闸管(SITH)中的二次外延,有效地提高了栅阴极击穿电压,增强了通过栅极正向阻断阳极电压的能力。对键合过程中硅硅界面进行了研究,提出了提高界面质量的工艺措施;同时,给出了控制栅阴极击穿电压一致性的方法。对采用此方法制成的SITH的IV特性进行了测量,并给出了实际测试结果。A novel method for fabricating static induction thyristor （SITH） is presented, in which silicon direct bonding （SDB） is used, instead of the traditional epitaxy technique during the construction of cathode. An obvious improvement has been observed on the breakdown voltage of the gate-cathode, and consequently, the control ability on anode voltage has bee enhanced. The interface between two silicon wafers during the process of bonding is investigated, and techniques to improve the interface quality are proposed. A method to control the breakdown voltage of gate junction with respect to the cathode is described. Measurements are made on I-V＂ characteristics of S1TH fabricated with the method, and test results are discussed.

关 键 词：硅-硅直接键合 静电感应晶闸管 电力器件 

分 类 号：TN386.7[电子电信—物理电子学]